ID | Mod | Spec |
1081 | MT47H128M8SH-25E:M | Part Number: | MT47H128M8SH-25E:M | Description: | IC DRAM 1G PARALLEL 60FBGA | Lead Free Status / RoHS Status: | Lead free / RoHS Compliant | Supplier Device Package | 60-FBGA (8x10) | Memory Interface | Parallel | Packaging | Bulk | Memory Format | DRAM | Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Memory Type | Volatile | Operating Temperature | 0°C ~ 85°C (TC) | Mounting Type | Surface Mount | Detailed Description | SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 400MHz 400ps 60-FBGA (8x10) | Package / Case | 60-TFBGA | Technology | SDRAM - DDR2 | Series | - | Memory Size | 1Gb (128M x 8) | Digi-Key Part Number | MT47H128M8SH-25E:M-ND | Voltage - Supply | 1.7 V ~ 1.9 V | Write Cycle Time - Word, Page | 15ns | Base Part Number | MT47H128M8 | Access Time | 400ps | Clock Frequency | 400MHz | Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
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1082 | MT47H256M8EB-25E:C | Part Number: | MT47H256M8EB-25E:C | Description: | IC DRAM 2G PARALLEL 60FBGA | Lead Free Status / RoHS Status: | Lead free / RoHS Compliant | Memory Interface | Parallel | Other Names | 557-1588 "######"MT47H256M8EB-25E:C-ND | Moisture Sensitivity Level (MSL) | 3 (168 Hours) | Voltage - Supply | 1.7 V ~ 1.9 V | Mounting Type | Surface Mount | Series | - | Access Time | 400ps | Operating Temperature | 0°C ~ 85°C (TC) | Memory Format | DRAM | Base Part Number | MT47H256M8 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Supplier Device Package | 60-FBGA (9x11.5) | Digi-Key Part Number | 557-1588-ND | Clock Frequency | 400MHz | Technology | SDRAM - DDR2 | Package / Case | 60-TFBGA | Detailed Description | SDRAM - DDR2 Memory IC 2Gb (256M x 8) Parallel 400MHz 400ps 60-FBGA (9x11.5) | Write Cycle Time - Word, Page | 15ns | Memory Type | Volatile | Packaging | Tray | Memory Size | 2Gb (256M x 8) |
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1083 | MX30LF1G08AA-TI | Part Number: | MX30LF1G08AA-TI | Description: | IC FLASH 1G PARALLEL 48TSOP | Lead Free Status / RoHS Status: | Lead free / RoHS Compliant | Digi-Key Part Number | 1092-1146-ND | Memory Interface | Parallel | Technology | FLASH - NAND | Memory Size | 1Gb (128M x 8) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Memory Format | FLASH | Voltage - Supply | 2.7 V ~ 3.6 V | Other Names | 1092-1146 "######"MX30LF1G08AA-TI-ND | Moisture Sensitivity Level (MSL) | 3 (168 Hours) | Packaging | Tray | Detailed Description | FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 30ns 48-TSOP | Memory Type | Non-Volatile | Supplier Device Package | 48-TSOP | Write Cycle Time - Word, Page | 30ns | Operating Temperature | -40°C ~ 85°C (TA) | Access Time | 30ns | Package / Case | 48-TFSOP (0.724, 18.40mm Width) | Series | MX30LF | Mounting Type | Surface Mount |
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1084 | MX30LF1G18AC-TI | Part Number: | MX30LF1G18AC-TI | Description: | IC FLASH 1G PARALLEL 48TSOP | Lead Free Status / RoHS Status: | Lead free / RoHS Compliant | Voltage - Supply | 2.7 V ~ 3.6 V | Series | MX30LF | Digi-Key Part Number | 1092-1209-ND | Supplier Device Package | 48-TSOP | Detailed Description | FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 20ns 48-TSOP | Other Names | 1092-1209 "######"6310O-48TBAIYPBB99 | Operating Temperature | -40°C ~ 85°C (TA) | Memory Format | FLASH | Memory Type | Non-Volatile | Package / Case | 48-TFSOP (0.724, 18.40mm Width) | Memory Size | 1Gb (128M x 8) | Technology | FLASH - NAND | Moisture Sensitivity Level (MSL) | 3 (168 Hours) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Packaging | Tray | Manufacturer Standard Lead Time | 20 Weeks | Access Time | 20ns | Mounting Type | Surface Mount | Memory Interface | Parallel | Write Cycle Time - Word, Page | 20ns |
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1085 | NAND01GW3B2CN6E | Part Number: | NAND01GW3B2CN6E | Description: | IC FLASH 1G PARALLEL 48TSOP | Lead Free Status / RoHS Status: | Lead free / RoHS Compliant | Voltage - Supply | 2.7 V ~ 3.6 V | Detailed Description | FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 25ns 48-TSOP | Digi-Key Part Number | NAND01GW3B2CN6E-ND | Supplier Device Package | 48-TSOP | Base Part Number | NAND01G-A | Mounting Type | Surface Mount | Series | - | Moisture Sensitivity Level (MSL) | 3 (168 Hours) | Package / Case | 48-TFSOP (0.724, 18.40mm Width) | Access Time | 25ns | Memory Size | 1Gb (128M x 8) | Memory Type | Non-Volatile | Packaging | Tray | Technology | FLASH - NAND | Memory Format | FLASH | Write Cycle Time - Word, Page | 25ns | Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Memory Interface | Parallel | Operating Temperature | -40°C ~ 85°C (TA) |
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1086 | NAND02GW3B2DN6E | Part Number: | NAND02GW3B2DN6E | Description: | IC FLASH 2G PARALLEL 48TSOP | Lead Free Status / RoHS Status: | Lead free / RoHS Compliant | Operating Temperature | -40°C ~ 85°C (TA) | Memory Size | 2Gb (256M x 8) | Detailed Description | FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 25ns 48-TSOP | Moisture Sensitivity Level (MSL) | 3 (168 Hours) | Memory Interface | Parallel | Mounting Type | Surface Mount | Access Time | 25ns | Technology | FLASH - NAND | Voltage - Supply | 2.7 V ~ 3.6 V | Series | - | Supplier Device Package | 48-TSOP | Memory Type | Non-Volatile | Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Memory Format | FLASH | Packaging | Tray | Package / Case | 48-TFSOP (0.724, 18.40mm Width) | Write Cycle Time - Word, Page | 25ns | Digi-Key Part Number | NAND02GW3B2DN6E-ND | Base Part Number | NAND02G |
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1087 | NAND128W3A2BN6E | Part Number: | NAND128W3A2BN6E | Description: | IC FLASH 128M PARALLEL 48TSOP | Lead Free Status / RoHS Status: | Lead free / RoHS Compliant | Package / Case | 48-TFSOP (0.724, 18.40mm Width) | Mounting Type | Surface Mount | Voltage - Supply | 2.7 V ~ 3.6 V | Digi-Key Part Number | NAND128W3A2BN6E-ND | Moisture Sensitivity Level (MSL) | 3 (168 Hours) | Packaging | Tray | Memory Format | FLASH | Series | - | Supplier Device Package | 48-TSOP | Memory Type | Non-Volatile | Detailed Description | FLASH - NAND Memory IC 128Mb (16M x 8) Parallel 50ns 48-TSOP | Memory Interface | Parallel | Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Memory Size | 128Mb (16M x 8) | Access Time | 50ns | Base Part Number | NAND128-A | Other Names | 497-5037 "######"497-5037-ND | Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time - Word, Page | 50ns | Technology | FLASH - NAND |
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1088 | NAND256W3A2BN6E | Part Number: | NAND256W3A2BN6E | Description: | IC FLASH 256M PARALLEL 48TSOP | Lead Free Status / RoHS Status: | Lead free / RoHS Compliant | Operating Temperature | -40°C ~ 85°C (TA) | Memory Size | 256Mb (32M x 8) | Voltage - Supply | 2.7 V ~ 3.6 V | Memory Type | Non-Volatile | Access Time | 50ns | Moisture Sensitivity Level (MSL) | 3 (168 Hours) | Memory Format | FLASH | Base Part Number | NAND256-A | Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Package / Case | 48-TFSOP (0.724, 18.40mm Width) | Supplier Device Package | 48-TSOP | Other Names | 497-5038 "######"497-5038-ND | Digi-Key Part Number | NAND256W3A2BN6E-ND | Write Cycle Time - Word, Page | 50ns | Memory Interface | Parallel | Technology | FLASH - NAND | Packaging | Tray | Mounting Type | Surface Mount | Detailed Description | FLASH - NAND Memory IC 256Mb (32M x 8) Parallel 50ns 48-TSOP | Series | - |
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1089 | NAND512R3A2SZA6E | Part Number: | NAND512R3A2SZA6E | Description: | IC FLASH 512M PARALLEL 63VFBGA | Lead Free Status / RoHS Status: | Lead free / RoHS Compliant | Base Part Number | NAND512 | Write Cycle Time - Word, Page | 50ns | Memory Size | 512Mb (64M x 8) | Series | - | Moisture Sensitivity Level (MSL) | 3 (168 Hours) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Package / Case | 63-TFBGA | Memory Interface | Parallel | Operating Temperature | -40°C ~ 85°C (TA) | Packaging | Tray | Voltage - Supply | 1.7 V ~ 1.95 V | Technology | FLASH - NAND | Digi-Key Part Number | NAND512R3A2SZA6E-ND | Mounting Type | Surface Mount | Detailed Description | FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 50ns 63-VFBGA (9x11) | Memory Format | FLASH | Access Time | 50ns | Supplier Device Package | 63-VFBGA (9x11) | Memory Type | Non-Volatile |
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1090 | NAND512W3A2SN6E | Part Number: | NAND512W3A2SN6E | Description: | IC FLASH 512M PARALLEL 48TSOP | Lead Free Status / RoHS Status: | Lead free / RoHS Compliant | Detailed Description | FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 50ns 48-TSOP | Memory Type | Non-Volatile | Packaging | Tray | Technology | FLASH - NAND | Voltage - Supply | 2.7 V ~ 3.6 V | Access Time | 50ns | Base Part Number | NAND512-A | Package / Case | 48-TFSOP (0.724, 18.40mm Width) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Moisture Sensitivity Level (MSL) | 3 (168 Hours) | Operating Temperature | -40°C ~ 85°C (TA) | Digi-Key Part Number | NAND512W3A2SN6E-ND | Series | - | Memory Interface | Parallel | Write Cycle Time - Word, Page | 50ns | Memory Format | FLASH | Mounting Type | Surface Mount | Memory Size | 512Mb (64M x 8) | Supplier Device Package | 48-TSOP |
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